MetalorganicVaporPhaseEpitaxy相关论文
Improved interface quality and luminescence capability of InGaN/GaN quantum wells with Mg pretreatme
By Mg pretreatment of the bottom GaN barrier surface,the growth behavior of the high indium content InGaN/GaN quantum we......
In situ asymmetric island sidewall growth(AISG)was developed to improve the crystalline quality of the(11-22)GaN films o......
Green-Yellow Emission Efficiency and Droop Improvement in Modified Triangular InGaN/GaN Quantum Well
A modified triangular quantum well(QW)structure composed of high indium content InGaN wetting layers,graded InGaN layers......
